Bf423 datasheet pdf
High Voltage Transistors(PNP Silicon), BF423 datasheet, BF423 circuit, BF423 data sheet : ONSEMI, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. An important focus of the manual is the examination of application-specific aspects which must be taken into account in component selection and application. Except as expressly permitted in this Agreement, Licensee shall not use, modify, copy or distribute the Content or Modifications. datasheet (jpg): -- - complementary type: see BF398: similar type list: ↑ BF421A: similar type search: search similar: note: a similar type is not always a replacement type, please check the application requirements carefully before BF423 is used for replacement (no warranty) BF423. 2004 Nov 10 2 NXP Semiconductors Product data sheet NPN high-voltage transistors BF420; BF422 FEATURES •Low feedback capacitance. BF423 PNP Silicon Transistor Descriptions • High voltage application • Monitor equipment application Features • Collector-Emitter voltage : VCEO=-250V • Complementary pair with BF422 Ordering Information Type NO. RFQ BF494_D27Z : [email protected] Related parts for BF494_D27Z Image Part Number Description Manufacturer Quantity BF4418-20B LAMP CCFL 1400V 4.1MM X 418MM JKL Components Corp. ELECTRICAL CHARACTERISTICS(Tcase =25°C unless otherwise specified) Symbol Parameter Test Conditions Min.
1996 Dec 09 2 Philips Semiconductors Product speciﬁcation PNP high-voltage transistors BF421; BF423 FEATURES •Low feedback capacitance. Seller information bennyinternational Will usually post within 1 business day of receiving cleared payment – opens in a new window or tab. Single Supply Operation: to 36V Dual Supply Operation: to ±18V Allow Comparison of Voltages Near Ground Potential Low. Features, Applications: Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 45 °C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA . In diode datasheet diode in diode datasheet name, description or manufacturer contain: The purposes of the IDM rating are: Request for this document already exists and is waiting for approval. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. 2N2484 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. PNP Silicon Transistors BF With High Reverse Voltage BF High breakdown voltage Low.
BF423 datasheet, BF423 datasheets, BF423 pdf, BF423 circuit : CDIL - PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. BF494_D74Z 500pcs New and Original in Stock, Find BF494_D74Z Stock, Datasheet, PDF, Inventory at Ariat-Tech.com Online, Order BF494_D74Z with warrantied and confidence. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
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2004 Nov 10 2 Philips Semiconductors Product speciﬁcation PNP high voltage transistors BF421; BF423 FEATURES •Low feedback capacitance. LTD 1 QW-R201-058,A PNP HIGH-VOLTAGE TRANSISTORS FEATURES *Collector-Emitter Voltage: VCEO=-250V. BF423 PNP Silicon Transistor Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Datasheet − production data Features Internally compensated Short-circuit protection Gain and phase match between amplifier Low power consumption Pin-to-pin compatible with MC1458/LM358 Gain bandwidth (at 100 kHz): 5.5 MHz Description The MC4558 is a high performance monolithic dual operational amplifier. PNP Silicon Transistors BF With High Reverse Voltage BF High breakdown voltage Low collector-emitter saturation voltage Low capacitance. To make this current flow through the transistor the value of base current I B can be calculated using the below formula: Where h FE, is the current gain of the transistor which in our case is This stage is called Saturation Region. DATA SHEET Product speciﬁcation File under Discrete Semiconductors, SC07 April 1995 DISCRETE SEMICONDUCTORS J174; J175; J176; J177 P-channel silicon field-effect transistors. BF494_D27Z 500pcs New and Original in Stock, Find BF494_D27Z Stock, Datasheet, PDF, Inventory at Ariat-Tech.com Online, Order BF494_D27Z with warrantied and confidence.
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